NVMFD5489NLT3G

NVMFD5489NLT3G

  • Description:MOSFET 2N-CH 60V 4.5A 8DFN
  • Series:-

SKU:c299ab9fece0 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 4.5A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:4.5A
  • Rds On (Max) @ Id, Vgs:65mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:330pF @ 25V
  • Power - Max:3W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFD5489NLT3G

Overview

The NVMFD5489NLT3G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 27 A per channel. The device exhibits a typical on-resistance (Rds(on)) of 14 mΩ at a gate-source voltage (Vgs) of 10 V. Designed for surface mount applications, it utilizes an SO-8FL-Dual-8 package with dimensions of 5.1 mm in length, 4.9 mm in width, and 1.05 mm in height. The component supports a maximum power dissipation of 24 W and operates within a temperature range from -55°C to +175°C junction temperature.

Feature Summary

  • Dual configuration integrates two independent N-channel MOSFETs into a single compact package for space-constrained designs.
  • AEC-Q101 qualified for automotive reliability standards ensuring robust performance under varying thermal conditions.
  • Low on-resistance characteristics minimize conduction losses and improve overall system efficiency.

Applications

  • Automotive power distribution systems requiring high reliability and low loss switching.
  • DC-DC converter circuits utilizing synchronous rectification for improved efficiency.
  • Motor control applications involving low-voltage motor driving and protection.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the source provides valid traceability and authenticity guarantees given the component's automotive qualification requirements.

Selection Notes

Select this component when a dual-channel solution is required for 60 V applications with moderate current demands around 27 A. Compare total gate charge and threshold voltage against alternative devices to ensure compatibility with existing gate driver capabilities. Evaluate thermal resistance parameters relative to the intended PCB copper area for adequate heat dissipation.

Part Context

This part belongs to onsemi's NVMFD5 series of dual power MOSFETs designed for automotive and industrial markets. The series offers various voltage and current ratings packaged in small form factors like SO-8FL. These components are engineered to replace discrete dual setups, reducing board space and parasitic inductance in power stages.

Replacement Considerations

Direct pin-compatible alternatives within the same series include NVMFD5C478NLT1G and NVMFD5C462NT1G. Verify that substitute parts match or exceed the required Vds, Id, and Rds(on) specifications. Check for equivalent AEC-Q101 qualification if automotive usage is mandated.

NVMFD5489NLT3GNVMFD5489NLT3G

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