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The NVMFD5489NLT3G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 27 A per channel. The device exhibits a typical on-resistance (Rds(on)) of 14 mΩ at a gate-source voltage (Vgs) of 10 V. Designed for surface mount applications, it utilizes an SO-8FL-Dual-8 package with dimensions of 5.1 mm in length, 4.9 mm in width, and 1.05 mm in height. The component supports a maximum power dissipation of 24 W and operates within a temperature range from -55°C to +175°C junction temperature.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the source provides valid traceability and authenticity guarantees given the component's automotive qualification requirements.
Select this component when a dual-channel solution is required for 60 V applications with moderate current demands around 27 A. Compare total gate charge and threshold voltage against alternative devices to ensure compatibility with existing gate driver capabilities. Evaluate thermal resistance parameters relative to the intended PCB copper area for adequate heat dissipation.
This part belongs to onsemi's NVMFD5 series of dual power MOSFETs designed for automotive and industrial markets. The series offers various voltage and current ratings packaged in small form factors like SO-8FL. These components are engineered to replace discrete dual setups, reducing board space and parasitic inductance in power stages.
Direct pin-compatible alternatives within the same series include NVMFD5C478NLT1G and NVMFD5C462NT1G. Verify that substitute parts match or exceed the required Vds, Id, and Rds(on) specifications. Check for equivalent AEC-Q101 qualification if automotive usage is mandated.