NVMFD5C446NLWFT1G

Overview

The NVMFD5C446NLWFT1G is a dual N-channel power MOSFET manufactured by onsemi, designed for high-efficiency power conversion in compact applications. It features a 40V drain-source breakdown voltage and an ultra-low on-resistance of 2.65mΩ at VGS=10V, reducing to 3.9mΩ at VGS=4.5V. The device supports a continuous drain current of up to 70A at TC=25°C and handles pulse currents up to 280A. Packaged in a 5x6mm DFN8 (SO-8FL) surface-mount footprint with wettable flanks, it ensures reliable soldering and optical inspection. Operating within a junction temperature range of -55°C to +175°C, it meets AEC-Q101 automotive standards.

Feature Summary

• Ultra-low conduction losses achieved through minimized RDS(on) across standard gate drive voltages
• Compact 5x6mm DFN8 package optimized for space-constrained PCB layouts
• Enhanced manufacturing reliability via wettable flank design facilitating automated optical inspection
• Automotive-grade qualification ensuring durability under rigorous environmental conditions

Applications

• Automotive power distribution systems requiring AEC-Q101 compliance
• Compact DC-DC converters and point-of-load modules
• Portable electronic devices demanding high efficiency in small form factors

Procurement Notes

Verify the specific suffix 'WFT1G' confirms the inclusion of wettable flanks and tape-and-reel packaging configuration. Confirm that the component meets RoHS directives and lead-free requirements as specified in the official datasheet. Ensure compatibility with standard reflow soldering profiles for DFN packages during assembly planning.

Selection Notes

Select this component when low on-resistance is critical for thermal management in 40V systems. The dual-channel configuration allows for efficient half-bridge or synchronous rectifier topologies. Consider the 5x6mm footprint constraints and ensure adequate copper area for heat dissipation given the 3.2W power dissipation rating at ambient temperature.

Part Context

This part belongs to the NVMFD5C series of dual N-channel MOSFETs from onsemi. The series is characterized by advanced trench technology aimed at minimizing switching and conduction losses. The NVMFD5C446NL variant specifically targets applications needing robust performance in a small outline package, balancing electrical efficiency with physical size constraints.

Replacement Considerations

Direct substitutes must match the 40V VDS, dual N-channel configuration, and 5x6mm DFN8 package. Verify equivalent RDS(on) values at 10V and 4.5V VGS to maintain circuit efficiency. Check for identical pinout assignments and thermal characteristics to ensure seamless integration without redesign.