NVMFD6H846NLWFT1G

Overview

The onsemi NVMFD6H846NLWFT1G is a dual N-channel MOSFET housed in a compact 5x6 mm DFN8 package. It features an 80 V drain-source breakdown voltage and a maximum continuous drain current of 31 A at case temperature of 100 °C. The device exhibits a low on-resistance of 15 mΩ at VGS = 10 V and ID = 5 A, with a typical gate threshold voltage of 2.0 V. Switching characteristics include a turn-on delay time of 10 ns and a fall time of 7 ns under specified test conditions. The component operates within a junction temperature range of -55 °C to 175 °C and complies with RoHS standards.

Feature Summary

• Dual N-channel configuration integrated into a small footprint for space-constrained PCB layouts.
• Low on-resistance minimizes conduction losses and thermal generation during operation.
• Optimized gate charge and capacitance values reduce switching energy and drive requirements.
• Available in a variant with solderable wings to facilitate automated optical inspection.

Applications

• Automotive power distribution systems requiring AEC-Q101 compliance.
• High-density DC-DC converter modules.
• Motor control circuits for electric actuators.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm package variations and reel specifications. Ensure that the procurement channel provides valid traceability documentation required for automotive-grade components. Cross-reference the part number with official obsolescence notices to confirm long-term availability status before finalizing supply agreements.

Selection Notes

Select this component when design constraints demand a dual N-channel solution within a 5x6 mm envelope. Evaluate the thermal resistance parameters relative to the intended heatsinking strategy to ensure junction temperatures remain within safe operating limits. Confirm that the gate drive voltage aligns with the specified threshold characteristics for optimal switching performance.

Part Context

This device belongs to the NVMFD6H series of dual MOSFETs designed for high-efficiency power management. It shares the same physical dimensions and general electrical architecture as other members of the family, such as the NVMFD6H852NL, while offering specific on-resistance and current ratings tailored for distinct load applications.

Replacement Considerations

Direct substitutes within the same package and voltage class include the NVMFD6H852NL. Verify pin compatibility and thermal characteristics before implementation. Alternative single-channel devices may require circuit redesign to accommodate the dual configuration.