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The NVMFWD020N06CT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 5x6 mm (SO8FL) surface-mount package. It features a drain-to-source voltage of 60 V and a maximum continuous drain current of 27 A at TC = 25 °C. The device exhibits a typical RDS(on) of 20.3 mΩ at VGS = 10 V. Key electrical parameters include a total gate charge of 5.8 nC, an input capacitance of 355 pF, and a forward transconductance of 12 S. Thermal resistance ratings are 4.8 °C/W junction-to-case and 47 °C/W junction-to-ambient. The component operates within a temperature range of -55 °C to +175 °C.
Verify the specific ordering suffix 'T1G' corresponds to the tape and reel packaging configuration containing 1500 units per reel. Confirm that the wettable flank variant matches the required automated optical inspection standards for the production line. Ensure compliance with Pb-Free and Halogen Free/BFR Free material requirements as specified in the datasheet.
Select this component when a dual N-channel configuration is required in a 5x6 mm footprint. Evaluate thermal performance based on the 4.8 °C/W junction-to-case resistance for heatsinking strategies. Consider the 60 V rating and 27 A current capability against peak load requirements. Verify compatibility with standard SO8FL land patterns during PCB layout.
This part belongs to the NVMFD020N06C series of dual N-channel MOSFETs. The 'W' in the part number specifically denotes the wettable flank construction, distinguishing it from the standard NVMFD020N06C variant. Both share identical electrical characteristics but differ in package termination geometry for inspection purposes.
Direct substitutes include the NVMFD020N06C for non-inspection-critical designs. Other dual N-channel MOSFETs in the SO8FL package with similar 60 V and 20 mΩ specifications may be considered if pinout and thermal profiles align.