NVMJD012N06CLTWG

Overview

The NVMJD012N06CLTWG is a dual N-channel power MOSFET from onsemi, rated for 60 V drain-to-source voltage and 42 A continuous drain current at TC = 25°C. It features an RDS(on) of 11.9 mΩ at VGS = 10 V and ID = 25 A, with a total gate charge (QG) of 11.5 nC at VGS = 10 V. The device operates within a junction temperature range of -55°C to +175°C and utilizes an LFPAK8 (CASE 760AF) surface-mount package.

Feature Summary

• Dual N-Channel Configuration
• AEC-Q101 Qualified and PPAP Capable
• Low On-Resistance for Reduced Conduction Losses
• Low Gate Charge and Capacitance for Efficient Switching

Applications

• Automotive Power Management Systems
• High-Density DC-DC Converters
• Motor Control Circuits

Procurement Notes

Verify the specific ordering suffix TWG to confirm tape and reel packaging containing 3000 units per reel. Ensure the component marking matches the official CASE 760AF diagram. Confirm RoHS compliance and Pb-free status through manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for automotive or industrial applications. Evaluate thermal resistance values against the specific PCB copper pad area and ambient conditions. Verify that the maximum pulsed drain current and avalanche energy ratings align with the circuit's transient requirements.

Part Context

This part belongs to the NVMJD012 series of dual N-channel MOSFETs manufactured by onsemi. It is designed as a space-efficient alternative to discrete single-channel devices, integrating two independent channels into a single 5x6 mm footprint to optimize board real estate in dense electronic assemblies.

Replacement Considerations

Direct replacements must match the 60V rating, 42A current capacity, and LFPAK8 package dimensions. Verify pinout compatibility between Drain-Source-Gate configurations. Check if the substitute meets AEC-Q101 qualification standards for automotive reliability.