NVMJD015N06CLTWG

NVMJD015N06CLTWG

$2.02
  • Description:MOSFET 2N-CH 60V 10.1A 8LFPAK
  • Series:-

SKU:ff052fca84ed Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 10.1A 8LFPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:-
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:10.1A (Ta), 35A (Tc)
  • Rds On (Max) @ Id, Vgs:14.4mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:643pF @ 30V
  • Power - Max:3.1W (Ta), 37W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:8-LFPAK
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMJD015N06CLTWG

Overview

The NVMJD015N06CL is a dual N-channel power MOSFET from onsemi, housed in an LFPAK8 (CASE 760AF) package measuring 5x6 mm. It features a drain-to-source voltage of 60 V and a maximum continuous drain current of 35 A at TC = 25°C. The device exhibits a low on-resistance of 14.4 mΩ at VGS = 10 V and 20.4 mΩ at VGS = 4.5 V. Total gate charge is 9.4 nC at VGS = 10 V. Thermal resistance junction-to-case is 4.06 °C/W. Operating temperature range spans -55°C to +175°C.

Feature Summary

  • Dual configuration with compact 5x6 mm footprint for space-constrained designs
  • Low RDS(on) minimizes conduction losses across operating conditions
  • Low QG and capacitance reduce driver losses and switching energy
  • AEC-Q101 qualified and PPAP capable for automotive reliability

Applications

  • Automotive power distribution systems
  • DC-DC converters requiring high efficiency
  • Motor control applications

Procurement Notes

Verify the specific ordering suffix TWG indicates tape and reel packaging containing 3000 units per reel. Confirm RoHS compliance and Pb-free status during procurement. Ensure component authenticity through authorized channels. Validate marking codes match the specified DIAGRAM for assembly location and lot tracking.

Selection Notes

Select this component when dual channel isolation or synchronized switching is required within a small form factor. Evaluate thermal performance against the 4.06 °C/W junction-to-case rating under steady-state conditions. Consider the 60 V breakdown voltage limit for system design margins. Verify gate drive voltage compatibility with the 10 V and 4.5 V threshold specifications.

Part Context

This part belongs to onsemi's NVMJD series of dual N-channel MOSFETs. It utilizes the LFPAK8 surface-mount package designed for efficient heat dissipation. The device integrates two independent channels within a single footprint, optimizing board space compared to discrete single-channel solutions.

Replacement Considerations

Direct replacements must match the 60 V rating, dual channel configuration, and LFPAK8 package dimensions. Verify equivalent RDS(on) and QG values to maintain circuit efficiency. Check pinout compatibility between G1/S1/D1 and G2/S2/D2 terminals.

NVMJD015N06CLTWGNVMJD015N06CLTWG
$2.02
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