NVMJD025N04CTWG

Description：MOSFET N-CH 40V LFPAK56
Series：-

SKU:6fe254a88fd0 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V LFPAK56
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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NVMJD025N04CTWG

Overview

The NVMJD025N04CTWG is a dual N-channel power MOSFET from onsemi, housed in an LFPAK8 (CASE 760AF) surface-mount package measuring 5x6 mm. It features a drain-to-source voltage of 40 V and a maximum continuous drain current of 21.5 A at TC = 25°C. The device exhibits a low on-resistance of 25 mΩ at VGS = 10 V and ID = 7.5 A, with a total gate charge of 4.6 nC. Thermal resistance from junction to case is 7.2 °C/W under steady-state conditions. The component operates within a temperature range of -55°C to +175°C and meets AEC-Q101 qualification standards.

Feature Summary

Dual N-Channel Configuration
Small Footprint for Compact Design
Low On-Resistance to Minimize Conduction Losses
Low Gate Charge and Capacitance to Minimize Driver Losses
AEC-Q101 Qualified and PPAP Capable

Applications

Automotive Power Management Systems
DC-DC Converters
Motor Control Applications

Procurement Notes

Verify the specific ordering suffix 'TWG' corresponds to the tape and reel packaging format containing 3000 units per standard shipping configuration. Confirm that the requested part number matches the exact electrical specifications and thermal characteristics required for the target application environment before finalizing procurement orders.

Selection Notes

Select this component when a compact dual N-channel MOSFET solution is required for automotive or industrial applications. Ensure the design accommodates the 40 V drain-to-source voltage rating and the 21.5 A continuous current capability at specified case temperatures. Verify that the driver circuit can effectively manage the 4.6 nC total gate charge for optimal switching performance.

Part Context

This device belongs to the NVMJD025N04C series of dual N-channel power MOSFETs manufactured by onsemi. It utilizes the LFPAK8 package to provide efficient thermal management and reduced footprint compared to traditional packages. The series is designed to meet stringent automotive reliability standards while offering high efficiency in power switching applications.

Replacement Considerations

Direct replacement requires verifying pinout compatibility and ensuring equivalent electrical parameters such as VDSS, RDS(on), and QG. Check if alternative dual N-channel MOSFETs in similar packages meet the AEC-Q101 qualification requirement if automotive compliance is mandatory.