NVR4501NT1G

Single FETs, MOSFETs Overview

The NVR4501NT1G is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 3.2 A at ambient temperature. Its maximum gate-source voltage rating is ±12 V, with a typical gate threshold voltage of 1.2 V at 250 µA. The component exhibits a maximum on-resistance of 80 mΩ when driven at 4.5 V. Electrical characteristics include a maximum gate charge of 6 nC and an input capacitance of 200 pF. Power dissipation is rated at 1.25 W at the junction temperature. The operational temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for efficient switching applications
• Low on-resistance optimized for low-voltage power management circuits
• Surface-mount SOT-23-3 packaging suitable for space-constrained designs

Single FETs, MOSFETs Applications

• Power management integrated circuit output stages
• Load switching in portable electronic devices
• DC-DC converter synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official manufacturer documentation to ensure compatibility with design specifications. Confirm that the ordering suffix matches the required tape and reel or cut tape packaging format. Check for any specific environmental compliance declarations such as RoHS status directly from the datasheet. Ensure the supplier provides valid traceability documents consistent with onsemi manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component based on its 20 V voltage rating and 3.2 A current capability relative to system requirements. Evaluate the 80 mΩ on-resistance to determine thermal performance under expected load conditions. Consider the SOT-23-3 package dimensions for PCB layout constraints. Verify that the drive voltage levels in the application circuit align with the specified gate threshold and charge parameters for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This component belongs to the NVR4501N series of small-signal MOSFETs produced by onsemi. It is designed for general-purpose switching applications requiring low voltage operation. The device is part of a broader portfolio of discrete semiconductors focused on power management and signal switching solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists provided by onsemi for verified substitute part numbers. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions.