NX6008NBKSX

Overview

The NX6008NBKSX is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 60 V drain-source voltage range and supports a continuous drain current of 220 mA at 25 °C. The device features a low on-state resistance of 2.7 Ω typical at VGS = 4.5 V. Packaged in the compact SOT363 (SC-88) surface-mount format, it includes ElectroStatic Discharge protection exceeding 2 kV HBM. Key dynamic characteristics include a total gate charge of 0.46 nC and fast switching times with rise and fall times of 2 ns and 4 ns respectively.

Feature Summary

• Dual N-channel configuration integrated into a single ultra-small plastic package for space-constrained designs.
• Trench MOSFET technology enables very fast switching speeds and low threshold voltage operation.
• Integrated ElectroStatic Discharge protection rated above 2 kV Human Body Model standard.

Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape width. Ensure the component status matches the project requirements, as datasheet versions may indicate development or production phases. Confirm that the selected variant aligns with the required thermal and electrical specifications for the intended application environment.

Selection Notes

Select this component for applications requiring dual N-channel control in minimal board space. The low threshold voltage facilitates logic-level compatibility, while the Trench technology ensures efficient switching performance. Evaluate the thermal resistance parameters relative to the PCB footprint design to ensure adequate heat dissipation under maximum operating conditions.

Part Context

This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and high-density electronics. The SOT363 package provides a compact solution compared to traditional transistor arrangements. The product utilizes silicon-based Trench technology to optimize the balance between conduction losses and switching speed for general-purpose signal and power management tasks.

Replacement Considerations

NX6008NBKS

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) is rated at 60 V.

Does the device include ESD protection?

Yes, the device incorporates ElectroStatic Discharge protection rated greater than 2 kV according to the Human Body Model.

What is the typical gate charge value?

The typical total gate charge (QG) is 0.46 nC under specified test conditions.