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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.26A 6DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：260mA
- Rds On (Max) @ Id, Vgs：2.8Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：23.6pF @ 10V
- Power - Max：285mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：DFN1010B-6
- Grade：-
- Qualification：-
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Overview
The NX7002BKXBZ is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1010B-6 (SOT1216) package measuring 1.1 x 1.0 x 0.37 mm. The device supports a drain-source voltage of 60 V and gate-source voltages up to ±20 V. Per transistor, it provides a continuous drain current of 260 mA at 25 °C ambient temperature and 330 mA at 25 °C case temperature. The on-state resistance is typically 2.2 Ω at VGS = 10 V and ID = 200 mA. Total power dissipation reaches 4032 mW when mounted on an FR4 PCB with a 1 cm² drain pad.
Feature Summary
- Logic-level compatible for direct interface with standard logic outputs
- Leadless ultra-small and ultra-thin SMD plastic package design
- Trench MOSFET technology enabling very fast switching speeds
- ElectroStatic Discharge protection exceeding 2 kV HBM rating
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific ordering suffix 'Z' against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the DFN1010B-6 package outline and pin configuration before integration into the printed circuit board layout.
Selection Notes
Select this component for applications requiring compact dual N-channel switching solutions. The low thermal resistance and small footprint make it suitable for space-constrained designs. Verify that the required drain current and voltage ratings align with the operational limits defined in the product data sheet.
Part Context
This part belongs to Nexperia's Trench MOSFET series, designed for efficient switching in small form factors. The dual configuration allows for independent control of two channels within a single package, reducing board space compared to discrete single-channel alternatives.
Replacement Considerations
NX7002BKX
FAQ
What is the maximum junction temperature for the NX7002BKXBZ?
The maximum operating junction temperature is 150 °C.
Does the NX7002BKXBZ have automotive qualification?
No, unless explicitly stated otherwise in the data sheet, the product is not suitable for automotive use and is not AEC-Q101 qualified.
What is the typical total gate charge for this device?
The typical total gate charge is 1 nC.
