NXH004P120M3F2PTNG

Overview

The NXH004P120M3F2PTNG is a Silicon Carbide (SiC) power module from the EliteSiC series, featuring a 4 mΩ M3S MOSFET half-bridge topology in an F2 package. It includes a thermistor and utilizes a Si3N4 Direct Bonded Copper substrate with pre-applied thermal interface material. The device supports press-fit installation and operates within a junction temperature range of -40°C to 175°C. Key electrical parameters include a drain-source voltage of 1200 V, a continuous drain current of 338 A at Tc = 80°C, and a maximum power dissipation of 1098 W.

Feature Summary

• Integrated thermistor for real-time temperature monitoring
• Pre-applied thermal interface material for simplified assembly
• Press-fit pin configuration for robust mechanical connection
• Si3N4 DBC substrate for enhanced thermal cycling reliability

Applications

• Solar Inverters
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix 'PTNG' against official onsemi documentation to confirm the inclusion of press-fit pins and pre-applied TIM. Ensure compatibility with the F2 package dimensions and PIM36 footprint during integration. Cross-reference the RoHS compliance status and halogen-free certification requirements with the latest datasheet revision before finalizing procurement specifications.

Selection Notes

Select this component based on the required 1200 V blocking capability and 4 mΩ on-resistance for high-efficiency switching applications. Evaluate the thermal resistance values and maximum junction temperature limits against the system's cooling infrastructure. Confirm that the gate drive voltage ranges and switching loss characteristics align with the intended operating frequency and load conditions.

Part Context

This part belongs to the EliteSiC family of silicon carbide modules, designed for high-power density applications. It represents the M3 generation of SiC technology, offering improved performance over previous iterations. The F2 package provides a standardized form factor for easy integration into existing power converter designs requiring half-bridge configurations.

Replacement Considerations

Direct replacements must match the 1200 V rating, 4 mΩ Rds(on), and F2 package outline. Verify pinout compatibility, specifically the press-fit terminal arrangement and thermistor connections. Consider thermal impedance and switching speed differences when substituting with other manufacturers' SiC half-bridge modules.