NXH010P120M3F1PG

Overview

The NXH010P120M3F1PG is a Silicon Carbide (SiC) power module featuring a 10 mΩ, 1200 V M3S MOSFET half-bridge topology in an F1 package. It includes a thermistor for thermal monitoring and utilizes press-fit pins for mounting. The device supports a continuous drain current of 105 A at Tc = 80°C and handles a pulsed drain current of 316 A. Maximum power dissipation reaches 272 W at TJ = 175°C. Operating junction temperature ranges from -40°C to 150°C, with a maximum rating of 175°C. The gate-source voltage limits are +22 V and -10 V.

Feature Summary

• Integrated NTC thermistor for real-time thermal monitoring
• Press-fit pin configuration for secure mechanical connection
• Pre-applied thermal interface material option available

Applications

• Solar Inverters
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix 'G' indicates the absence of pre-applied thermal interface material compared to the 'T' variant. Confirm compliance with RoHS standards and halogen-free requirements during procurement. Ensure the selected packaging quantity matches the blister tray specifications provided by the manufacturer.

Selection Notes

Select this component when a 1200 V SiC half-bridge with low on-resistance is required. Evaluate thermal resistance values against heatsink capabilities to ensure operation within the 175°C maximum junction temperature limit. Consider the press-fit installation method for PCB integration and verify gate drive voltage compatibility with the specified ±22 V / -10 V range.

Part Context

This module belongs to the EliteSiC family, designed for high-efficiency power conversion. It represents the M3S generation of silicon carbide technology, offering improved switching characteristics over previous iterations. The F1 package provides a standardized footprint for industrial applications requiring robust power handling.

Replacement Considerations

NXH010P120M3F1PTG serves as a direct functional substitute, differing only by the inclusion of pre-applied thermal interface material.