NXH011F120M3F2PTHG

$104.61

Description：MOSFET 4N-CH 1200V 105A 34PIM
Series：-

SKU:c21baeb61922 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 4N-CH 1200V 105A 34PIM
Series：-
Mfr：onsemi
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：105A (Tc)
Rds On (Max) @ Id, Vgs：16mOhm @ 100A, 18V
Vgs(th) (Max) @ Id：4.4V @ 60mA
Gate Charge (Qg) (Max) @ Vgs：284nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：6211.6pF @ 800V
Power - Max：244W (Tj)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：34-PIM (56.7x42.5)
Grade：-
Qualification：-

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NXH011F120M3F2PTHG

Overview

The NXH011F120M3F2PTHG is a Silicon Carbide (SiC) MOSFET module from the EliteSiC series, featuring an 11 mΩ on-resistance and a 1200 V drain-source voltage rating. It utilizes a full-bridge topology with four N-channel switches housed in an F2 package (Case 180HU). The device supports press-fit installation and includes an integrated thermistor for thermal monitoring. Maximum ratings include a continuous drain current of 105 A at Tc = 80 °C, a pulsed drain current of 316 A, and a maximum power dissipation of 244 W. Operating junction temperatures range from -40 °C to 175 °C.

Feature Summary

Integrated HPS DBC substrate for enhanced thermal performance
Built-in thermistor for precise temperature monitoring
Pre-applied thermal interface material available for simplified assembly
Press-fit pin configuration for robust mechanical connection

Applications

Solar Inverters
Uninterruptible Power Supplies
Electric Vehicle Charging Stations
Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the presence or absence of pre-applied thermal interface material. Ensure that the selected variant matches the required assembly specifications for the target application. Cross-reference the manufacturer's latest datasheet revision to confirm current availability and any potential updates to the product parameters before finalizing procurement orders.

Selection Notes

Select this component based on its 1200 V blocking capability and low on-resistance suitable for high-efficiency switching applications. Consider the full-bridge topology when designing circuits requiring four-switch configurations. Evaluate the thermal resistance characteristics and the necessity of the integrated thermistor for system-level temperature management. Confirm compatibility with the press-fit mounting method during the mechanical design phase.

Part Context

This part belongs to the NXH011F120M3F2 family within onsemi's EliteSiC portfolio. It shares the same core electrical specifications and topology as variants such as NXH011F120M3PHG and NXH011F120M3P1THG. The primary distinctions among these parts lie in the packaging options and the inclusion of pre-applied thermal interface materials, allowing designers to choose based on their specific manufacturing processes.

Replacement Considerations

Direct replacements within the same family include NXH011F120M3PHG and NXH011F120M3P1THG. These alternatives share identical electrical characteristics and pinouts but differ in the presence of pre-applied thermal interface material. Verify that the substitute part number meets the specific assembly requirements regarding TIM usage before implementation.