NXH015F120M3F1PTG

Overview

The NXH015F120M3F1PTG is a Silicon Carbide (SiC) MOSFET power module from onsemi, featuring a 4-pack full-bridge topology within an F1 package. It integrates four 1200 V M3S SiC MOSFETs with a nominal on-resistance of 15 mΩ and includes a thermistor on an Al2O3 DBC substrate. The device utilizes press-fit pins for mounting and offers options with or without pre-applied thermal interface material. Key electrical ratings include a continuous drain current of 77 A at TC = 80 °C and a maximum junction temperature of 175 °C.

Feature Summary

• Integrates four 1200 V SiC MOSFETs in a full-bridge configuration
• Includes a built-in thermistor for thermal monitoring
• Utilizes Al2O3 Direct Bonded Copper (DBC) substrate
• Features press-fit pin technology for secure mounting

Applications

• Solar Inverters
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix to confirm the presence of pre-applied thermal interface material. The PTG suffix indicates the inclusion of TIM, whereas PG denotes the version without it. Ensure compatibility with the required mounting method, as the module utilizes press-fit pins rather than traditional screw terminals. Confirm RoHS compliance and halogen-free status during procurement.

Selection Notes

Select this module for high-frequency applications requiring low switching losses and high thermal stability. The 15 mΩ on-resistance supports efficient conduction at moderate currents. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive voltage ranges align with the recommended operating conditions for optimal performance and reliability.

Part Context

This component belongs to the NXH015F120M3F1 series of SiC modules. Variants such as NXH015F120M3PG and NXH015F120M3P1TG share the same core electrical specifications but differ in packaging details regarding thermal interface materials. The F1 package provides a standardized footprint for integration into various power electronic designs.

Replacement Considerations

Direct replacements must match the 1200 V rating, 15 mΩ on-resistance, and full-bridge topology. Verify pinout compatibility, particularly for the Kelvin source connections and thermistor terminals. Ensure the replacement module supports press-fit installation or adapt the mechanical design accordingly.