NXH027B120MNF2PTG

$242.10

Description：IGBT MODULE 1200V
Series：-

SKU:9fe0d47fd1f9 Category: IGBT Modules Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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NXH027B120MNF2PTG

Overview

The NXH027B120MNF2PTG is a silicon carbide boost module containing three parallel 80 mΩ, 1200 V SiC MOSFETs, five parallel 10 A, 1200 V SiC boost diodes, two parallel 150 A, 1200 V bypass diodes, one 75 A, 1200 V protection diode for the MOSFETs and an NTC thermistor. The device is packaged in an F2 package with pre-applied phase-change material and press-fit pins.

Feature Summary

Pre-applied Phase-change Material
Press-fit Pins
Pin Compatible with Full Si Boost Module
Internal 3 Ohm Gate Resistors for the SiC MOSFETs

Applications

Solar Inverter

Procurement Notes

Verify the specific ordering suffix to confirm shipping configuration, as the datasheet lists NXH027B120MNF2P2TG alongside NXH027B120MNF2PTG. Confirm that the required quantity matches the blister tray specification of 20 units per container. Ensure compatibility with existing thermal interface materials and mounting torque requirements of 2.4 Nm.

Selection Notes

Select this module for applications requiring high-voltage silicon carbide switching with integrated boost diodes and bypass functionality. Consider the internal gate resistors and pin compatibility when replacing legacy silicon boost modules. Verify thermal management capabilities against the specified junction-to-heatsink thermal resistance values under expected operating conditions.

Part Context

This component belongs to onsemi's silicon carbide power module lineup, specifically designed for boost converter topologies. It integrates multiple SiC devices within a single F2 package to simplify system design and improve power density compared to discrete solutions.