NXH100B120H3Q0SG

Overview

The NXH100B120H3Q0SG is a trench field-stop IGBT module manufactured by onsemi. It features two independent switches with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 61 A. The device has a maximum power dissipation of 186 W and operates within a junction temperature range of -40°C to +150°C. The saturation voltage is 2.3 V at 15 V gate drive and 50 A collector current. It utilizes a 22-pin Q0BOOST package designed for baseplate mounting.

Feature Summary

• Trench field-stop IGBT technology for optimized switching performance
• Dual independent switch configuration in a compact form factor
• Designed for robust thermal management via baseplate mounting

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency welding equipment

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the ordering part number matches the exact package variant required for the target application. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement orders.

Selection Notes

Select this component based on the 1200 V blocking capability and 61 A current rating suitable for medium-power applications. Evaluate the 186 W power dissipation limit against the system's thermal design constraints. Confirm that the Q0BOOST package dimensions align with the available heatsink or baseplate interface specifications.

Part Context

This module belongs to the NXH100 series, which focuses on high-efficiency power conversion solutions. The Q0BOOST designation indicates a specific package style optimized for boost converter topologies and general inverter applications. It represents onsemi's silicon-based IGBT offerings for industrial power electronics.

Replacement Considerations

NXH100B120H3Q0PG is a confirmed substitute part number from the same manufacturer.