NXH100B120H3Q0STG

Overview

The NXH100B120H3Q0STG is a trench field-stop IGBT module from onsemi, featuring two independent switches in a Q0BOOST package. It has a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A. The typical saturation voltage is 2.3 V at 15 V gate drive and 50 A. The module supports junction temperatures up to 150°C and includes an integrated NTC thermistor for thermal monitoring.

Feature Summary

• Trench field-stop technology for optimized switching performance
• Integrated NTC thermistor for precise thermal management
• Q0BOOST surface-mount package design

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency inverters

Procurement Notes

Verify the specific suffix STG against official datasheets to confirm pinout and internal configuration differences compared to other variants like SG or PG. Ensure compatibility with existing PCB footprints and thermal interface materials before procurement.

Selection Notes

Select this module for applications requiring high reliability and efficient thermal management in compact designs. Consider the 1200V rating and 50A current capacity against peak load requirements. Verify that the Q0BOOST package fits within the mechanical constraints of the target system.

Part Context

This component belongs to the NXH100 series of Si/SiC hybrid modules from onsemi. It utilizes advanced trench field-stop IGBT technology combined with silicon carbide components to enhance efficiency and power density in medium-power conversion applications.

Replacement Considerations

NXH100B120H3Q0SG is a documented alternative variant within the same family. Verify electrical parameter equivalence and package compatibility before substitution.