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Product Detailed Parameters
- Description：1200V GEN III Q0PACK WITH NI-PLA
- Series：-
- Mfr：onsemi
- Package：Tray
- IGBT Type：-
- Configuration：Three Level Inverter
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 75A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：18-PIM/Q0PACK (55x32.5)
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：54 A
- Power - Max：122 W
- Current - Collector Cutoff (Max)：200 µA
- Input Capacitance (Cies) @ Vce：4877 pF @ 25 V
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Overview
The NXH100T120L3Q0S1NG is a T-type Neutral Point Clamped (NPC) three-level inverter power module. It integrates half-bridge IGBTs rated at 100 A and 1200 V, paired with 40 A/1200 V diodes. The neutral point section includes 75 A/650 V IGBTs and 50 A/650 V diodes. Key electrical parameters include a half-bridge collector-emitter saturation voltage of 1.8 V and a switching loss of 2.5 mJ. The neutral point IGBT features a 1.4 V saturation voltage and 1.25 mJ switching loss. The module operates within a junction temperature range of -40°C to 175°C and utilizes solder pin connections.
Feature Summary
- T-type NPC topology for three-level inverter applications
- Integrated on-board NTC thermistor for thermal monitoring
- Lead-free and halogen-free RoHS compliant construction
Applications
- Solar inverters
- Uninterruptible power supplies
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the Q0PACK case outline matches the target PCB footprint. Ensure thermal interface material specifications align with the datasheet requirements for optimal heat dissipation performance.
Selection Notes
Select this component for designs requiring high-voltage three-level inverter topologies. Evaluate the 1200 V half-bridge and 650 V neutral point ratings against system bus voltages. Consider the integrated thermistor for simplified thermal management circuitry design without external sensors.
Part Context
This device belongs to the NXH series of silicon IGBT modules from onsemi. It is designed for medium to high-power conversion systems. The module combines advanced IGBT technology with optimized diode characteristics to minimize switching losses in complex inverter configurations.
Replacement Considerations
NXH100T120L3Q0S1N
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the module include thermal protection components?
Yes, the module contains an onboard NTC thermistor for temperature monitoring.
What is the isolation test voltage rating?
The isolation test voltage is 3000 VRMS for 1 second at 60 Hz.
