NXH160T120L2Q2F2S1G

Overview

NXH160T120L2Q2F2S1G is a power module featuring a split T-type neutral-point clamped three-level inverter topology. It integrates two 160 A / 1200 V half-bridge IGBTs with reverse diodes, two 120 A / 650 V neutral-point rectifiers, two 100 A / 650 V neutral-point IGBTs with reverse diodes, two 60 A / 1200 V half-bridge rectifiers, and one negative temperature coefficient thermistor. The 1200 V IGBTs exhibit a collector-emitter saturation voltage of 2.15 V and switching energy of 4300 µJ. The 650 V IGBTs show a saturation voltage of 1.47 V and switching energy of 2560 µJ. Absolute maximum ratings include a 1200 V collector-emitter voltage and a pulse collector current of 543 A at 175 °C.

Feature Summary

• Split T-type neutral-point clamped three-level inverter topology for reduced switching losses and higher efficiency
• Integrated thermal management via baseplate design and negative temperature coefficient thermistor
• Weldable pins facilitating printed circuit board assembly and production reliability

Applications

• Industrial motor drives
• High-efficiency power conversion systems
• Inverter applications requiring low switching loss

Procurement Notes

Verify the specific suffix F2S1G against official onsemi documentation to confirm exact configuration and revision status. Cross-reference datasheet parameters such as VCE(sat) and switching energies with current engineering requirements. Ensure compatibility with intended gate drive circuits and thermal management solutions before procurement.

Selection Notes

Select this component for applications demanding high efficiency through three-level topology. Evaluate the 160 A rated current and 1200 V blocking capability against system peak loads. Consider the integrated NTC for thermal monitoring needs. Confirm that the module's physical dimensions and pin configurations fit the target mechanical design constraints.

Part Context

This part belongs to onsemi's advanced silicon IGBT module portfolio designed for industrial power electronics. It utilizes a split T-type NPC structure to optimize performance compared to traditional two-level inverters. The integration of multiple voltage levels within a single package simplifies system architecture while maintaining robust electrical characteristics.

Replacement Considerations

NXH160T120L2Q1SG is listed as a similar product with lifetime status. Verify functional equivalence and parameter alignment before substitution. Other variants in the Q1 series may offer different packaging or configuration options.