NXH160T120L2Q2F2SG

$107.22

Description：POWER INTEGRATED MODULE (PIM), I
Series：*

SKU:9032f1bffddc Category: IGBT Modules Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：POWER INTEGRATED MODULE (PIM), I
Series：*
Mfr：onsemi
Package：Bulk
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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NXH160T120L2Q2F2SG

Overview

The NXH160T120L2Q2F2SG is a Split T-Type Neutral Point Clamped (NPC) three-level inverter power module. It integrates two 160 A / 1200 V Half Bridge IGBTs with inverse diodes, two 120 A / 600 V Neutral Point rectifiers, two 100 A / 600 V Neutral Point IGBTs with inverse diodes, two 60 A / 1200 V Half Bridge rectifiers, and a negative temperature coefficient thermistor. The Half Bridge IGBTs feature a collector-emitter saturation voltage of 2.15 V and switching energy of 4300 µJ. The Neutral Point IGBTs have a saturation voltage of 1.47 V and switching energy of 2560 µJ. The module operates within a junction temperature range of -40 °C to 150 °C.

Feature Summary

Split T-type neutral point clamped three-level inverter topology
Integrated negative temperature coefficient thermistor for thermal monitoring
Solderable pins for printed circuit board assembly
Baseplate design for effective heat dissipation

Applications

Solar inverters
Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure that the device marking matches the requested part number exactly. Confirm compliance requirements such as lead-free status before finalizing procurement orders.

Selection Notes

Select this module for applications requiring split T-type NPC topologies. Verify that the required continuous and pulsed current ratings align with the Half Bridge and Neutral Point specifications. Ensure the gate drive voltage and short-circuit withstand time capabilities match the system protection requirements.

Part Context

This component belongs to onsemi's portfolio of silicon-based IGBT power modules designed for high-efficiency power conversion. It utilizes Case 180AK packaging to provide robust insulation and thermal management for demanding industrial and renewable energy environments.

Replacement Considerations

NXH160T120L2Q1PG

FAQ

What is the maximum short-circuit withstand time for the Half Bridge IGBT?

The maximum short-circuit withstand time is 5 microseconds when VGE is 15 V, VCE is 600 V, and the junction temperature is less than or equal to 150 °C.