NXH240B120H3Q1P1G

$77.66

Description：150KW 110V Q1BOOST PRESS-FIT PI
Series：-

SKU:fe5b0129fae2 Category: IGBT Modules Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：150KW 110V Q1BOOST PRESS-FIT PI
Series：-
Mfr：onsemi
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Three Level Inverter
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 80A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：32-PIM (71x37.4)
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：92 A
Power - Max：266 W
Current - Collector Cutoff (Max)：150 µA
Input Capacitance (Cies) @ Vce：19082 pF @ 20 V

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NXH240B120H3Q1P1G

Overview

The NXH240B120H3Q1P1G is a Si/SiC hybrid power module featuring a three-channel boost stage. It integrates ultra field stop trench IGBTs with silicon carbide diodes to minimize conduction and switching losses. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 92 A at 80°C case temperature. Maximum power dissipation reaches 266 W for the IGBTs and 54 W for protection diodes. Operating junction temperatures range from -40°C to 150°C, with thermal resistance values specified for chip-to-heatsink and chip-to-case interfaces.

Feature Summary

Hybrid architecture combining Ultra Field Stop trench IGBTs with fast-switching SiC diodes
Low inductive layout design optimized for high-frequency operation
Integrated NTC thermistor for precise thermal monitoring
Press-fit pin configuration for secure mechanical mounting

Applications

Solar inverters
Energy storage systems (ESS)

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The 'P' suffix indicates press-fit pins, while 'S' denotes solder pins. Confirm that the package type matches the intended assembly process. Ensure compliance with RoHS directives as indicated by the 'G' suffix. Cross-reference the manufacturer part number with distributor listings to validate authenticity and availability.

Selection Notes

Select this component when designing high-efficiency boost converters requiring low switching losses. Evaluate thermal management requirements based on the specified maximum power dissipation and thermal resistance values. Ensure gate drive circuits accommodate the recommended ±20 V gate-emitter voltage limits. Consider the integrated thermistor for implementing active temperature protection strategies within the system design.

Part Context

This module belongs to the EliteSiC/C0116 series, representing onsemi's hybrid power technology. It utilizes the Q1 package format, specifically Case 180AX for the press-fit variant. The product line targets renewable energy applications where reliability and efficiency are critical. The hybrid approach leverages the robustness of silicon IGBTs with the superior switching characteristics of silicon carbide.