NXH300B100H4Q2F2SG-R

Overview

The NXH300B100H4Q2F2SG-R is a Si/SiC hybrid power module from onsemi, utilizing EliteSiC technology in a Q2BOOST package. It integrates three channels of trench field-stop IGBTs with 1200 V silicon carbide Schottky diodes. The IGBTs feature a collector-emitter voltage rating of 1000 V and a continuous collector current of 100 A at 25°C. The boost diodes are rated for 1200 V reverse voltage and 30 A forward current. The module includes an integrated NTC thermistor with a nominal resistance of 22 kΩ at 25°C for thermal monitoring.

Feature Summary

• Combines high-performance trench field-stop IGBTs with low-loss SiC diodes to reduce system power dissipation.
• Features a low-inductive layout design to enhance electromagnetic compatibility and switching stability.
• Provides high power density within the compact Q2BOOST package configuration.

Applications

• Solar inverters
• Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pin configuration and packaging details. Ensure that the component meets all relevant environmental compliance standards required for the intended deployment environment before finalizing procurement decisions.

Selection Notes

Evaluate the thermal resistance characteristics and junction temperature limits to ensure adequate heat sinking solutions are implemented. Confirm that the gate drive circuitry aligns with the specified threshold voltages and internal gate resistor values to optimize switching performance and prevent device stress.

Part Context

This component belongs to the EliteSiC series of Si/SiC hybrid modules designed for high-efficiency power conversion. It represents a specialized solution combining silicon IGBT robustness with silicon carbide diode speed, targeting applications requiring high power density and reduced switching losses compared to traditional all-silicon alternatives.

Replacement Considerations

NXH300B100H4Q2F2PG

FAQ

What is the function of the integrated NTC thermistor?

The integrated NTC thermistor provides real-time temperature monitoring capabilities, allowing for precise thermal management and protection within the power module application.

How does the SiC diode integration benefit the module?

The integration of 1200 V SiC Schottky diodes significantly reduces reverse recovery energy loss and switching losses compared to standard silicon fast recovery diodes, thereby improving overall system efficiency.