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The NXH350N100H4Q2F2P1G-R is a Si/SiC hybrid IGBT module from onsemi's EliteSiC I-Type NPC series, rated at 1000 V. It integrates high-performance trench field-stop IGBTs with rugged anti-parallel diodes in a Q2PACK (93x47 mm) press-fit package. The outer IGBTs support a continuous collector current of 303 A at TC=80°C, while inner IGBTs handle 298 A. The module features low switching losses and a compact design for high power density applications.
Verify the specific ordering suffix against official documentation to confirm pin configuration. The P1G suffix indicates press-fit pins, whereas S1G denotes solder pins. Ensure compatibility with the target mounting infrastructure before procurement. Confirm RoHS compliance status as required by local regulations.
Select this module for three-phase inverter designs requiring high current density and robust thermal management. Evaluate the junction temperature limits and safe operating area curves to ensure reliable operation under expected load conditions. Consider the integrated thermistor for precise temperature monitoring during system integration.
This component belongs to the NXH350N100H4Q2F2 family, which includes variants with different terminal configurations. The P1G variant specifically utilizes press-fit technology for board attachment, distinguishing it from solder-pin alternatives within the same electrical specification set.
NXH350N100H4Q2F2S1G-R
The maximum operating junction temperature is 175°C.
Yes, the module includes an integrated NTC thermistor with a nominal resistance of 22 kΩ at 25°C.
The P1G suffix indicates that the module uses press-fit pins for mounting.