NXH35C120L2C2S1G

$68.61

Description：IGBT MOD 1200V 35A 26DIP
Series：-

SKU:554d554b1b74 Category: IGBT Modules Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 35A 26DIP
Series：-
Mfr：onsemi
Package：Tube,Tube
IGBT Type：-
Configuration：Three Phase Inverter with Brake
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 35A
Input：Three Phase Bridge Rectifier
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：26-PowerDIP Module (1.199", 47.20mm)
Supplier Device Package：26-DIP
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：35 A
Power - Max：20 mW
Current - Collector Cutoff (Max)：250 µA
Input Capacitance (Cies) @ Vce：8.33 nF @ 20 V

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NXH35C120L2C2S1G

Overview

The NXH35C120L2C2S1G is a silicon IGBT module from onsemi, configured as a three-phase inverter with brake functionality. It features a collector-emitter maximum voltage of 1.2 kV and a continuous collector current of 35 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.4 V and operates within a junction temperature range of -40°C to +150°C. Packaged in a 26-DIP through-hole format, it serves as a TMPIM CIB/CI module designed for power conversion applications requiring robust switching characteristics.

Feature Summary

Three-phase inverter topology integrated with brake circuit capability
Silicon-based IGBT technology for high-voltage switching
Through-hole 26-DIP package design for board mounting

Applications

Industrial motor drives
AC/DC power conversion systems
Inverter circuits for variable frequency drives

Procurement Notes

Verify component authenticity and datasheet revisions prior to integration. Confirm that the specific suffix denotes the correct pinout and electrical parameters for your schematic. Ensure thermal management solutions align with the specified junction temperature limits and power dissipation requirements during operation.

Selection Notes

Select this module when a three-phase inverter configuration with integrated braking is required. Consider the 1.2 kV blocking voltage and 35 A current rating against system load demands. Evaluate the 26-DIP package constraints for PCB layout and ensure compatibility with existing gate drive interfaces and thermal dissipation strategies.

Part Context

This component belongs to onsemi's discrete and power modules category, specifically within the IGBT Silicon Modules sub-class. It represents a specialized solution for three-phase applications, distinct from standard half-bridge or single-switch configurations. The module integrates multiple semiconductor dies into a single packaged unit to simplify assembly and improve reliability in power electronics designs.