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The NXH400N100L4Q2F2SG is a power module containing an I-type neutral point clamped three-level inverter. It integrates field stop trench IGBTs and fast recovery diodes to reduce conduction and switching losses. The collector-emitter voltage (VCES) is 1000 V, with a maximum gate-emitter voltage of ±20 V. At TJ = 25°C and IC = 400 A, the outer IGBT saturation voltage (VCE(sat)) is typically 1.65 V. The nominal thermistor resistance at 25°C is 5 kΩ.
Verify the ordering suffix 'S' indicates solder pins rather than press-fit pins. Confirm RoHS compliance status and check for any product discontinuance notifications or PCNs prior to finalizing procurement plans.
Select this model for applications requiring high efficiency and superior reliability in three-level inverter topologies. Ensure the thermal management system accommodates the specified thermal resistance values and junction temperature limits.
This component belongs to the NXH400N100L4Q2F2 series manufactured by onsemi. It utilizes Q2PACK packaging with PIM48 dimensions (93x47 mm). The 'G' suffix denotes a lead-free package.
NXH400N100L4Q2F2PG is the direct alternative featuring press-fit pins instead of solder pins. Verify mechanical mounting compatibility before substitution.
The nominal resistance (R25) at 25°C is 5 kΩ.
The absolute maximum collector-emitter voltage (VCES) is 1000 V.
Yes, the module includes an integrated NTC thermistor for thermal monitoring.