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Product Detailed Parameters
- Description：80KW GENII 1200V 80MOHM SIC MOSF
- Series：-
- Mfr：onsemi
- Package：Tray
- IGBT Type：-
- Configuration：Dual Boost Chopper
- Vce(on) (Max) @ Vge, Ic：-
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：22-PIM/Q0BOOST (55x32.5)
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：118 W
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：3.227 nF @ 20 V
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Overview
The NXH40B120MNQ0SNG is a Silicon Carbide (SiC) power module from onsemi's EliteSiC series, featuring a dual boost stage topology. It integrates two 1200 V SiC MOSFETs with a typical on-resistance of 40 mΩ and two 1200 V SiC diodes within a Q0PACK (Case 180AJ) housing. The module includes an integrated NTC thermistor for thermal monitoring. Key electrical ratings include a continuous drain current of 38 A at TC = 80°C and a maximum operating junction temperature of 175°C. Thermal resistance from chip to case is specified at 0.81 K/W for the MOSFET and 0.70 K/W for the boost diode.
Feature Summary
- Integrated dual boost stage combining SiC MOSFETs and SiC diodes for high efficiency
- Low inductive layout design optimized for switching performance
- Includes bypass and anti-parallel diodes rated at 1200 V
- Built-in NTC thermistor for precise thermal management
Applications
- Solar inverters
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific ordering suffix 'SNG' against the manufacturer's official documentation to confirm assembly site, test site codes, and package compliance details. Ensure that the required blister tray packaging quantity aligns with your manufacturing line requirements before finalizing procurement orders.
Selection Notes
Select this component when designing high-frequency boost converters requiring low switching losses. Verify that the system's gate drive voltage range accommodates the -15 V to +25 V specification. Confirm that the heatsink interface can maintain the case temperature below 80°C to support the rated 38 A continuous current.
Part Context
This device belongs to the EliteSiC M1 MOSFET family, designed for high-power density applications. It utilizes silicon carbide technology to achieve superior thermal stability and lower conduction losses compared to traditional silicon devices. The Q0PACK provides a compact footprint suitable for space-constrained industrial and renewable energy systems.
Replacement Considerations
Direct replacement requires verifying pin compatibility and thermal resistance values. Check if alternative modules offer similar RDS(on) and switching loss characteristics while maintaining the same 1200 V rating and package outline dimensions.
