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The NXH450N65L4Q2F2SG is a power module containing an I-type neutral point clamped three-level inverter. It integrates field stop trench IGBTs and fast recovery diodes (FRDs) to reduce conduction and switching losses. The module features solderable pins for surface mount installation and includes a thermistor for temperature monitoring. Maximum ratings include a collector-emitter voltage of 650 V, continuous outer IGBT current of 167 A at Tc=80°C, and inner IGBT current of 280 A. Thermal resistance from chip-to-case is 0.26 °C/W for outer IGBTs and 0.15 °C/W for inner IGBTs.
Verify the ordering suffix 'G' confirms lead-free and halide-free packaging as specified in the datasheet. Confirm the package type PIM40 Q2PACK matches the design requirements. Check assembly and test site codes on the marking diagram for traceability needs. Ensure thermal interface material specifications align with the provided thermal resistance data.
Select this module for applications requiring high efficiency and superior reliability through reduced switching losses. Verify that the system can accommodate the 650 V rating and the specific current capabilities of the outer and inner IGBTs. Consider the low inductive layout benefits for minimizing voltage spikes during switching operations.
This component belongs to the NXH450N65L4Q2F2 series of three-level NPC inverter modules. It is part of onsemi's portfolio of power modules designed for high-performance applications. The series includes variants with different pin configurations such as press-fit options.
NXH450N65L4Q2F2PG is a parameter equivalent alternative within the same series. It shares the same electrical characteristics but utilizes a PIM436 Q2PACK package with press-fit pins instead of solderable pins. Verify mechanical compatibility before substitution.
The maximum operating junction temperature is 150 °C.
Yes, the module includes a thermistor with a nominal resistance of 22 kΩ at 25 °C.
The isolation test voltage is 4000 VRMS for 1 second at 50 Hz.