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The NXH50M65L4C2ESG is a power module from onsemi featuring a converter-inverter-PFC circuit. It integrates a single-phase bridge rectifier, six 50 A/600 V IGBTs with anti-parallel diodes, two 75 A/650 V PFC IGBTs with anti-parallel diodes for a 2-channel interleaved PFC, and two 75 A/650 V PFC diodes. The unit includes an NTC thermistor and operates within a junction temperature range of -40°C to +150°C. Key electrical parameters include a maximum collector-emitter breakdown voltage of 650 V, a maximum continuous collector current of 50 A, and a maximum Vce(on) of 2.2 V at 15 V gate drive and 75 A collector current. Input capacitance (Cies) is specified at 2.608 nF at 20 V.
Verify the specific revision status and RoHS compliance details directly through official manufacturer documentation before integration. Confirm that the 27-PowerDIP package dimensions align with the target PCB layout requirements. Ensure the operating junction temperature limits are respected within the final system design constraints.
Select this module when a combined power conversion stage is required for industrial applications. The integrated PFC functionality simplifies design by reducing external component count. Verify that the 650 V rating meets the input voltage requirements of the specific inverter application.
This component belongs to the NXH series of IGBT modules manufactured by onsemi. It represents a specialized power module solution designed to consolidate multiple power stages into a single package, differing from standard discrete IGBT modules by including active PFC and rectification components.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases or manufacturer cross-reference tools for potential alternatives.