NXH50M65L4C2SG

Overview

The NXH50M65L4C2SG is a silicon IGBT module from onsemi, configured as a three-phase inverter. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 50 A at 25°C. The saturation voltage is specified at 1.6 V. The device operates within a temperature range of -40°C to +150°C and utilizes a DIP package.

Feature Summary

• Three-phase inverter topology for power conversion
• High thermal stability with operation up to 150°C
• Robust 650V blocking capability

Applications

• Industrial motor drives
• AC/DC converters
• Power factor correction circuits

Procurement Notes

Verify the specific datasheet version and electrical characteristics against official onsemi documentation before integration. Confirm that the three-phase inverter configuration aligns with the target circuit design requirements. Ensure thermal management solutions support the specified operating temperature limits and power dissipation parameters.

Selection Notes

Select this component for applications requiring a dedicated three-phase inverter solution with high voltage tolerance. The 50A current rating suits moderate power industrial loads. Evaluate thermal performance constraints relative to the 150°C junction limit. Compare alternative modules if different topologies or current ratings are necessary for the specific system architecture.

Part Context

This part belongs to onsemi's IGBT module portfolio, designed for efficient power switching. It complements other discrete and packaged semiconductor devices offered by the manufacturer. The series focuses on reliability and performance for industrial power electronics applications.

Replacement Considerations

NXH50M65L4Q1SG