NXH600B100H4Q2F2SG

$139.58

Description：MASS MARKET GEN3 Q2BOOST
Series：-

SKU:fab6a4067e20 Category: IGBT Modules Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MASS MARKET GEN3 Q2BOOST
Series：-
Mfr：onsemi
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Three Level Inverter
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 200A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：44-PIM (93x47)
Voltage - Collector Emitter Breakdown (Max)：1000 V
Current - Collector (Ic) (Max)：192 A
Power - Max：511 W
Current - Collector Cutoff (Max)：10 µA
Input Capacitance (Cies) @ Vce：13.256 nF @ 20 V

Download product information

NXH600B100H4Q2F2SG

Overview

The NXH600B100H4Q2F2SG is a Si/SiC hybrid three-channel symmetric boost module from onsemi. It integrates two 1000 V, 200 A IGBTs and two 1200 V, 60 A SiC diodes per channel. The device utilizes trench field stop technology for low switching loss and features a Q2 package (Case 180HE) with solder pins. Electrical characteristics include a collector-emitter saturation voltage of 1.69 V at 25°C and 2.15 V at 175°C. An integrated NTC thermistor provides temperature monitoring.

Feature Summary

Extremely efficient trench with field stop technology
Low inductive layout design
High power density module architecture
Integrated NTC thermistor

Applications

Solar inverters
Uninterruptable Power Supplies Systems

Procurement Notes

Verify the specific ordering suffix 'SG' to confirm the use of Case 180HE packaging with Pb-Free and Halide-Free solder pins. Ensure that the application board supports the required press-fit or solder pin mounting method appropriate for this variant. Confirm RoHS compliance requirements align with project specifications before finalizing procurement orders.

Selection Notes

Select this component when designing high-efficiency symmetric boost converters requiring Si/SiC hybrid performance. Evaluate thermal resistance values against system heat dissipation capabilities. Verify gate drive compatibility with the specified internal gate resistor and threshold voltages. Ensure operating temperatures remain within the absolute maximum ratings defined in the datasheet.

Part Context

This part belongs to the EliteSiC NXH600B100H4Q2 series. It shares the same core semiconductor structure as the NXH600B100H4Q2F2PG but differs in terminal configuration. The SG suffix specifically denotes the solder pin variant, whereas PG indicates press-fit pins. Both variants offer identical electrical performance within the Q2BOOST family.