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The NXH600N105H7F5P1HG is a high-power IGBT module manufactured by onsemi, designed for demanding industrial and renewable energy applications. It features a trench field-stop technology with an integrated three-phase inverter configuration. The module operates at a maximum collector-emitter voltage of 1050 V and supports a continuous collector current of 429 A. With a maximum power dissipation of 1080 W, it utilizes a chassis mount package type designated as 57-PIM (112x62). The device is rated for junction temperatures ranging from -40°C to 150°C.
Verify the specific suffix H7 against official datasheets to confirm pin-out compatibility and thermal interface requirements. Confirm that the 57-PIM package dimensions match the target heatsink design. Ensure the 1050V rating aligns with system DC bus voltages. Check for RoHS3 compliance status if required by project specifications.
Select this component when high power density and reliability are critical for solar or industrial inverter designs. The 1050V rating suits systems requiring higher voltage margins than standard 650V modules. Consider the 57-PIM form factor for space-constrained chassis mounting. Evaluate thermal management capabilities given the 1080W dissipation rating.
This part belongs to the NXH600N10x series of IGBT modules from onsemi. These modules utilize F5+BP packaging technology, which integrates high-performance silver sintered die attach for improved thermal cycling resistance. The series is engineered for high-efficiency power conversion in renewable energy and traction applications.
NXH600N105L7F5P1HG