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The NXH600N105L7F5P2HG is a quad configuration IGBT module from onsemi, utilizing silicon technology and housed in an F5BP package. It features FS7 IGBTs with HPS DBC-AGILE#N07L0 construction. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V, a continuous collector current of 429 A at 25°C, and a gate-emitter leakage current of 1 uA. The maximum power dissipation is 1.08 kW, with a maximum operating temperature of +175°C and a minimum of -40°C. The device supports press-fit installation and has a maximum gate-emitter voltage of 30 V.
Verify component authenticity through authorized onsemi distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required pin-out and packaging specifications. Ensure compliance with RoHS directives as indicated in official documentation before integration into final assemblies.
Select this module for applications requiring high power density and efficient thermal handling in renewable energy systems. Evaluate the 429 A continuous current rating against system load requirements. Consider the press-fit mounting style for assembly compatibility and the 175°C junction temperature capability for robust operation under varying thermal conditions.
This component belongs to onsemi's NXH series of power modules, specifically designed for high-power conversion tasks. It represents a hybrid solution combining FS7 IGBTs with EliteSiC technology elements in certain configurations, targeting efficiency improvements in utility-scale infrastructure such as solar inverters and energy storage units.
Consult official onsemi documentation for verified substitute part numbers. Cross-reference pin-outs and electrical ratings carefully when considering alternatives to ensure functional compatibility in existing designs.