NXH80B120L2Q0SNG

Overview

The NXH80B120L2Q0SNG is a silicon-based IGBT module from onsemi's Q0BOOST series, housed in a 22-pin PIM/Q0BOOST package measuring 55x32.5 mm. It features two independent half-bridge configurations rated for 1200 V collector-emitter voltage and 41 A continuous collector current at 25°C. The device has a maximum power dissipation of 103 W and operates within a temperature range of -40°C to +175°C.

Feature Summary

• Dual independent half-bridge topology for flexible circuit design
• Chassis mount configuration with press-fit pins for secure installation
• High thermal performance suitable for demanding power applications

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Procurement Notes

Verify the specific suffix 'SNG' against official datasheets to confirm pin compatibility and mechanical dimensions. Ensure thermal interface materials match the chassis mount requirements. Confirm that the 41 A rating aligns with system load profiles under expected operating temperatures.

Selection Notes

Select this component when a dual half-bridge solution is required in a compact footprint. Consider the 1200 V rating for medium-voltage systems. Evaluate thermal management needs given the 103 W dissipation limit. Compare against similar Q0PACK variants if different mounting styles are preferred.

Part Context

This module belongs to onsemi's NXH80T120L2Q0 family, utilizing EliteSiC or standard silicon technologies depending on the specific sub-series. The Q0BOOST packaging offers enhanced electrical isolation and reduced parasitic inductance compared to traditional modules, supporting higher switching frequencies.

Replacement Considerations

NXH80B120L2Q0SG is a solder-pin variant of the same electrical specification. NXH80T120L2Q0P2G uses a different Q0PACK case outline. Verify mechanical fit and pinout before substitution.