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The NXH80T120L2Q0P2G is a silicon IGBT module from onsemi, utilizing PIM Q0 T-type NPC technology. It features press-fit pins for mounting and operates with a collector-emitter voltage of 1200V and a continuous collector current of 80A at 25°C. The device incorporates trench field-stop IGBTs and fast recovery diodes within a compact Q0PACK package measuring 55x32.5mm. Designed for high reliability, it supports junction temperatures up to 175°C and includes an integrated NTC thermistor for thermal monitoring.
Verify the specific suffix P2G against official datasheets to confirm pin configuration and terminal type. Ensure compatibility with existing press-fit tooling and PCB layouts. Cross-reference thermal resistance values with system cooling requirements before finalizing procurement decisions.
Select this component for applications requiring high efficiency in three-phase inverter topologies. The T-type NPC structure offers lower conduction losses compared to standard half-bridge designs. Evaluate thermal performance under peak load conditions to ensure the 175°C junction limit is not exceeded during transient events.
This part belongs to the NXH80 series of IGBT modules designed by onsemi. It shares the Q0PACK footprint with other variants in the family but differs in internal chip configuration and terminal style. The P2G suffix specifically denotes the press-fit pin variant, distinguishing it from solder-pin versions like S2G.
Direct substitutes include NXH80T120L2Q0S2TG for solder-pin applications. Verify mechanical dimensions and electrical parameters when considering alternative manufacturers or different suffixes within the same product line.