NXPLQSC20650W6Q

NXPLQSC20650W6Q

  • Description:DIODE ARRAY SIC 650V 20A TO247-3
  • Series:-

SKU:4d8c68a67bfa Category: Brand:

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Product Detailed Parameters

  • Description:DIODE ARRAY SIC 650V 20A TO247-3
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:1.85 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:230 µA @ 650 V
  • Operating Temperature - Junction:175°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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NXPLQSC20650W6Q

Overview

The NXPLQSC20650W6Q is a Silicon Carbide (SiC) Schottky diode array manufactured by WeEn Semiconductors. It features a common cathode configuration with two independent anodes sharing a single cathode terminal. The device is housed in a TO-247-3 through-hole package designed for high-power applications. Key electrical specifications include a maximum DC reverse voltage of 650 V and an average forward current rating of 20 A per diode. The typical forward voltage is 1.7 V at 10 A, with a maximum junction operating temperature of 175°C.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology to achieve superior thermal performance and high-temperature stability compared to traditional silicon devices.
  • Features a zero reverse recovery time characteristic inherent to Schottky barrier operation, minimizing switching losses and electromagnetic interference during high-frequency transitions.
  • Employs a robust TO-247-3 through-hole package structure that facilitates efficient heat dissipation and secure mechanical mounting in industrial environments.

Applications

  • High-efficiency DC-DC converters and power supply modules
  • Uninterruptible Power Supply (UPS) systems
  • Industrial motor drive inverters

Procurement Notes

This component is officially classified as obsolete and is no longer manufactured by WeEn Semiconductors. Procurement should focus on verifying the authenticity of remaining stock from authorized distributors or secondary market suppliers. Buyers must confirm the manufacturing date code and physical condition prior to purchase, as availability is limited to existing inventory only.

Selection Notes

Engineers replacing this part should prioritize SiC Schottky diode arrays with identical pinout configurations and matching electrical ratings. Critical parameters for selection include a minimum 650 V reverse voltage capability, 20 A continuous forward current per leg, and compatibility with the TO-247-3 footprint. Ensure the substitute device supports the required 175°C junction temperature rating for equivalent thermal reliability.

Part Context

The NXPLQSC20650W6Q belongs to the NXPSC series of wide-bandgap semiconductor devices produced by WeEn Semiconductors. This series targets demanding power electronics applications requiring high efficiency and compact form factors. As a legacy product within the portfolio, it represents earlier generations of SiC integration before subsequent model updates were released.

Replacement Considerations

Publicly confirmed parameter-equivalent substitutes include WNSC2D20650CWQ and WNSC5D20650CW6Q. These alternatives offer compatible electrical characteristics and package dimensions suitable for direct replacement in existing designs where the original part is unavailable.

FAQ

What is the reverse recovery time of the NXPLQSC20650W6Q?

The device exhibits a reverse recovery time of 0 ns due to its Schottky barrier construction, which eliminates minority carrier storage effects.

Is the NXPLQSC20650W6Q available for new production orders?

No, the component is marked as obsolete and is no longer manufactured by WeEn Semiconductors.

NXPLQSC20650W6QNXPLQSC20650W6Q

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