SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NXPLQSC20650W6Q is a Silicon Carbide (SiC) Schottky diode array manufactured by WeEn Semiconductors. It features a common cathode configuration with two independent anodes sharing a single cathode terminal. The device is housed in a TO-247-3 through-hole package designed for high-power applications. Key electrical specifications include a maximum DC reverse voltage of 650 V and an average forward current rating of 20 A per diode. The typical forward voltage is 1.7 V at 10 A, with a maximum junction operating temperature of 175°C.
This component is officially classified as obsolete and is no longer manufactured by WeEn Semiconductors. Procurement should focus on verifying the authenticity of remaining stock from authorized distributors or secondary market suppliers. Buyers must confirm the manufacturing date code and physical condition prior to purchase, as availability is limited to existing inventory only.
Engineers replacing this part should prioritize SiC Schottky diode arrays with identical pinout configurations and matching electrical ratings. Critical parameters for selection include a minimum 650 V reverse voltage capability, 20 A continuous forward current per leg, and compatibility with the TO-247-3 footprint. Ensure the substitute device supports the required 175°C junction temperature rating for equivalent thermal reliability.
The NXPLQSC20650W6Q belongs to the NXPSC series of wide-bandgap semiconductor devices produced by WeEn Semiconductors. This series targets demanding power electronics applications requiring high efficiency and compact form factors. As a legacy product within the portfolio, it represents earlier generations of SiC integration before subsequent model updates were released.
Publicly confirmed parameter-equivalent substitutes include WNSC2D20650CWQ and WNSC5D20650CW6Q. These alternatives offer compatible electrical characteristics and package dimensions suitable for direct replacement in existing designs where the original part is unavailable.
The device exhibits a reverse recovery time of 0 ns due to its Schottky barrier construction, which eliminates minority carrier storage effects.
No, the component is marked as obsolete and is no longer manufactured by WeEn Semiconductors.