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Product Detailed Parameters
- Description：DIODE ARRAY SIC 650V 20A TO247-3
- Series：-
- Mfr：WeEn Semiconductors
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io) (per Diode)：20A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：60 µA @ 650 V
- Operating Temperature - Junction：175°C (Max)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NXPSC20650W-AQ is a silicon carbide Schottky diode array manufactured by WeEn Semiconductors. It features a common cathode configuration with two diodes housed in a TO-247-3 through-hole package. The device supports a maximum DC reverse voltage of 650 V and an average rectified current of 20 A per diode. Forward voltage is specified at 1.7 V when tested at 10 A. The component exhibits zero nanosecond reverse recovery time, ensuring fast switching capabilities. It operates within a junction temperature range up to 175°C and maintains a reverse leakage current of 60 µA at the maximum rated voltage.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-efficiency power conversion
- Features a common cathode dual-diode configuration for bridge applications
- Provides zero reverse recovery time to minimize switching losses
- Designed for high thermal stability with a maximum junction temperature of 175°C
Applications
- High-frequency switched-mode power supplies
- DC-DC converter circuits requiring low reverse recovery charge
- Industrial motor drive systems
- Uninterruptible power supply (UPS) units
Procurement Notes
This component has reached end-of-life status and is no longer manufactured by WeEn Semiconductors. Verification of availability should focus on identifying parameter-equivalent replacement parts rather than sourcing the original item. Buyers must confirm that substitute components meet the specific electrical requirements of their design, particularly regarding voltage ratings and thermal characteristics, as direct stock is unavailable.
Selection Notes
Engineers selecting this part should prioritize SiC Schottky arrays for applications demanding minimal reverse recovery time and high-temperature operation. The TO-247-3 package offers robust through-hole mounting suitable for high-current scenarios. Selection criteria must include verifying compatibility with the system's peak inverse voltage and average forward current limits while considering the thermal management requirements associated with the 175°C junction temperature rating.
Part Context
The NXPSC20650W-AQ belongs to the NXPSC series of silicon carbide diode arrays from WeEn Semiconductors. This series is engineered for high-power density applications where traditional silicon diodes may suffer from excessive switching losses. The component represents a transition point in the manufacturer's portfolio, having been succeeded by newer variants such as the NXPSC20650W6Q to address evolving market demands for enhanced performance and compliance.
Replacement Considerations
Publicly confirmed parameter-equivalent substitutes include NXPSC20650W6Q, WNSC2D20650CWQ, BSDW20G65C2, and SICW2065DG5M-BP. These alternatives share similar electrical specifications but may differ in packaging or marking conventions. Designers should verify pinout compatibility and thermal resistance values before implementing any cross-replacement.
