NXPSC20650WQ

Description：DIODE ARRAY SIC 650V 20A TO247-3
Series：-

SKU:dc9e2a515344 Category: Diode Arrays Brand: WeEn Semiconductors

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Product introduction

Product Detailed Parameters

Description：DIODE ARRAY SIC 650V 20A TO247-3
Series：-
Mfr：WeEn Semiconductors
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io) (per Diode)：20A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：250 µA @ 650 V
Operating Temperature - Junction：175°C (Max)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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NXPSC20650WQ

Overview

The NXPSC20650WQ is a Silicon Carbide (SiC) Schottky diode array manufactured by WeEn Semiconductors. It features a common cathode configuration with two diodes housed in a TO-247-3 through-hole package. The device supports a maximum DC reverse voltage of 650 V and an average rectified current of 20 A per diode. Forward voltage is specified at 1.7 V when conducting 10 A. The component exhibits zero reverse recovery time and maintains a maximum junction operating temperature of 175°C.

Feature Summary

Utilizes Silicon Carbide technology for high thermal stability
Features a common cathode dual-diode array structure
Provides zero reverse recovery characteristics

Applications

High-frequency power conversion circuits
Industrial motor drive systems
Uninterruptible power supply units

Procurement Notes

Verify the specific suffix against official documentation, as variations may indicate different marking or packaging configurations. Confirm RoHS compliance status and check for product change notifications regarding manufacturing site transfers. Ensure the selected variant matches the required lead frame material and terminal finish specifications for the target assembly process.

Selection Notes

Select this component for designs requiring low switching losses and high-temperature operation. The TO-247-3 package facilitates efficient heat dissipation for high-current applications. Evaluate the forward voltage drop against system efficiency targets and ensure the PCB layout accommodates the through-hole mounting requirements and adequate creepage distances for the 650 V rating.

Part Context

This part belongs to the NXPSC series of wide-bandgap semiconductor devices from WeEn Semiconductors. The series focuses on replacing traditional silicon rectifiers in demanding power electronics environments. The TO-247-3 form factor provides robust mechanical stability suitable for industrial-grade equipment and high-power density converters.