NXV08A170DB2

Overview

The NXV08A170DB2 is a single-phase inverter automotive power MOSFET module designed for variable speed motor drives. It integrates two bare die MOSFETs, a current sense resistor, and an NTC thermistor within an APM12-CBA package. The device features an electrically isolated DBC substrate for low thermal resistance and includes a C snubber to minimize electromagnetic interference. Key electrical parameters include a drain-to-source voltage of 80 V, a continuous drain current of 200 A, and a maximum junction temperature of 175 °C. The module offers typical on-resistance values of 0.66 mΩ for the high-side FET and 0.90 mΩ for the low-side FET at TJ = 25°C.

Feature Summary

• Half bridge inverter configuration with integrated current and temperature sensing capabilities
• Electrically isolated DBC substrate providing low thermal resistance for efficient heat dissipation
• Compact design incorporating a C snubber for reduced electromagnetic interference (EMI)
• AQG324 qualified and PPAP capable for automotive reliability standards

Applications

• 48 V Motor Control systems
• Variable Speed Motor Drive applications

Procurement Notes

Verify component authenticity by checking the marking diagram against the physical unit. Ensure the lot ID, assembly location, year, work week, and serial number match the ordering information provided in the datasheet. Confirm RoHS compliance and lead-free status as specified in the mechanical characteristics section.

Selection Notes

Select this module for applications requiring an 80 V rating and up to 200 A continuous current. Consider the thermal resistance of 0.82 K/W when designing the cooling system. Ensure the gate drive circuitry supports the required gate charge and threshold voltage specifications for reliable switching performance.

Part Context

This component belongs to the NXV08 series of automotive power modules from onsemi. It utilizes the APM12-CBA package format, which is part of the APM12-series automotive module lineup. The module is designed to replace discrete MOSFET solutions with a more compact and integrated approach for motor control applications.

Replacement Considerations

NXV08A170DB1

FAQ

What is the isolation voltage of the NXV08A170DB2?

The isolation voltage is 2000 Vrms.

Does the module include built-in sensing components?

Yes, it includes a 0.3 mΩ current sense resistor and a 10 kΩ NTC thermistor.

What is the maximum junction temperature for this device?

The maximum junction temperature is 175 °C.