NXV08H250DT1

NXV08H250DT1

$42.54
  • Description:MOSFET 4N-CH 80V APM17-MDC
  • Series:-

SKU:38fc92c9bb9a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 80V APM17-MDC
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):80V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
  • Vgs(th) (Max) @ Id:4.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:24350pF @ 40V
  • Power - Max:-
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:17-PowerDIP Module (1.390", 35.30mm)
  • Supplier Device Package:APM17-MDC
  • Grade:Automotive
  • Qualification:AEC-Q101

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NXV08H250DT1

Overview

The NXV08H250DT1 is an automotive power MOSFET module featuring a two-phase configuration within the APM17-MDC package. It integrates four bare die MOSFETs rated for 80 V drain-to-source voltage and includes integrated NTC thermistors for temperature sensing. The module provides low thermal resistance junction-to-case of 0.54 °C/W and complies with UL 94 V-0 flammability standards. Electrical characteristics include a typical RDS(ON) of 0.757 mΩ for high-side switches and 0.549 mΩ for low-side switches at 25°C. It supports switching currents up to 400 A and operates with a maximum junction temperature of 175°C.

Feature Summary

  • Two-phase MOSFET module architecture allowing flexible half-bridge configurations by combining phase output terminals.
  • Electrically isolated DBC substrate designed to minimize thermal resistance between the junction and case.
  • Integrated NTC thermistors providing full traceability through module serialization and real-time temperature monitoring.
  • Qualified to AQG324 standards with internal components meeting AEC-Q101 and AEC-Q200 requirements.

Applications

  • 48 V inverter systems
  • 48 V traction applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging details, such as tube packing quantities and ambient temperature operating ranges. Ensure that the requested part number matches the exact revision level required for your design specifications before finalizing procurement orders.

Selection Notes

Select this module for designs requiring compact integration of dual-phase power stages with built-in thermal monitoring. Consider the 80 V rating and low on-resistance values when calculating conduction losses. Verify that the gate drive circuitry can handle the specified total gate charge and dynamic switching characteristics for the intended switching frequency.

Part Context

This component belongs to onsemi's Automotive Power MOSFET Module series, specifically designed for electric vehicle auxiliary systems. It utilizes the APM17-MDC case outline to provide a robust solution for high-current applications while maintaining electrical isolation and thermal efficiency suitable for automotive environments.

Replacement Considerations

Consult official substitution guides for compatible modules with similar pinouts and electrical ratings. Verify that any alternative device meets the same AQG324 qualification and physical dimensions to ensure mechanical compatibility without redesigning the PCB or heatsink interface.

FAQ

Can this module be used as a half-bridge?

Yes, the datasheet states that at the customer side, the module can be used as a 1/2 bridge MOSFET module by combining the two phase out power terminals.

What is the maximum junction temperature?

The maximum junction temperature (TJ) for the NXV08H250DT1 is 175°C.

Does the module include temperature sensing?

Yes, the module includes two NTC thermistors (NTC1 and NTC2) for temperature sensing and feature serialization for full traceability.

NXV08H250DT1NXV08H250DT1
$42.54
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