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Product Detailed Parameters
- Description：RF TRANS NPN 10V 9GHZ SOT-23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：9GHz
- Noise Figure (dB Typ @ f)：1.5dB ~ 2.5dB @ 1GHz
- Gain：-
- Power - Max：360mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 6V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PBR941B is a silicon NPN wideband transistor designed for GHz-range RF front-end applications. It operates in a surface-mount SOT23 package with pin configurations of base, emitter, and collector. Key electrical parameters include a transition frequency (fT) of up to 9 GHz at IC=15mA and VCE=6V, and a maximum unilateral power gain of 16 dB at 1 GHz. The device features a noise figure as low as 1.5 dB at 1 GHz. Limiting values specify a collector-base voltage of 20 V, collector-emitter voltage of 10 V, and total power dissipation of 360 mW at a soldering point temperature of 60 °C.
Feature Summary
- Gold metallization ensures excellent reliability
- Low noise performance suitable for sensitive RF stages
- High gain characteristics for efficient signal amplification
- Small physical size for compact circuit integration
Applications
- RF front ends of analog and digital cellular telephones
- RF front ends of cordless phones
- Radar detectors
- Satellite TV-tuners
- Communication and instrumentation systems
Procurement Notes
Verify the component status carefully, as the source document identifies this part as a preliminary specification from Philips Semiconductors dated January 2001. Confirm current availability and final specifications through official NXP channels, as design targets may have changed without notice. Ensure the ordering suffix matches the required package variant and that the manufacturer documentation aligns with the specific revision needed for your design.
Selection Notes
Select this transistor for UHF wideband applications requiring high gain and low noise in the GHz range. Consider the thermal resistance of 320 K/W and the need for heat sinking or derating if the soldering point temperature exceeds 60 °C. Ensure the operating conditions stay within the absolute maximum ratings, particularly the 10 V collector-emitter voltage limit. Verify impedance matching networks for optimal gain and noise figure performance at the target frequency.
Part Context
The PBR941B belongs to the family of UHF wideband transistors originally developed by Philips Semiconductors, now NXP Semiconductors. These components are engineered for high-frequency radio frequency applications. The device utilizes a silicon NPN structure housed in an SOT23 surface-mount package, providing a balance of performance and compactness for portable communication devices and instrumentation.
Replacement Considerations
PBR941
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) with an open base is 10 V.
What is the transition frequency of the PBR941B?
The transition frequency (fT) is typically 9 GHz when measured at IC = 15 mA and VCE = 6 V.
How is the device packaged?
The PBR941B is available in a surface-mount 3-pin SOT23 plastic package.
