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The PBRN113EK,115 is an NPN Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) manufactured by Nexperia. It features a collector-emitter voltage of 40 V and an output current capability of 600 mA in the SOT346 package. The device integrates two bias resistors: R1 is 1 kΩ and R2 is 1 kΩ, with a ratio tolerance of ±10%. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to over 400 depending on collector current, and a low collector-emitter saturation voltage. It operates within a junction temperature range of -65 °C to +150 °C.
Verify the manufacturer origin, as Nexperia products may be produced in various global facilities including Hong Kong, Malaysia, or China. Confirm the specific marking code 'G1' matches the SOT346 package variant. Ensure compliance with RoHS standards and check for any updates to the product status on the official Nexperia website before finalizing procurement specifications.
Select this component when space-saving integration of bias resistors is required for NPN switching applications. The SOT346 package is suitable for surface-mount designs needing 600 mA continuous current handling. Consider the thermal resistance values if operating near maximum power dissipation limits, and verify that the 40 V breakdown voltage meets the circuit requirements.
This part belongs to the PBRN113E series of BISS RETs, which includes variants like PBRN113ES and PBRN113ET. These devices are designed to replace discrete transistor and resistor networks, offering board-space reduction. The series is characterized by low VCEsat and high hFE, making it suitable for general-purpose digital switching tasks in compact electronic systems.
Direct pin-compatible replacements within the same family include PBRN113ES and PBRN113ET, though package differences must be accounted for. Verify that alternative parts maintain the same 1 kΩ/1 kΩ resistor configuration and 600 mA current rating to ensure functional equivalence in existing designs.