SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PBRN113ES,126 is an NPN Resistor-Equipped Transistor (RET) from the Breakthrough In Small Signal (BISS) family. It integrates bias resistors R1 and R2, both rated at 1 kΩ, with a ratio tolerance of ±10%. The device supports an output current of 800 mA and withstands a collector-emitter voltage of 40 V. Packaged in the SOT54 (SC-43A/TO-92) plastic single-ended leaded format, it features a maximum power dissipation of 700 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain ranging from 40 to 420 depending on collector current, and a low collector-emitter saturation voltage.
Verify the specific ordering suffix
Select the PBRN113ES variant when a through-hole SOT54 package is required for assembly processes incompatible with surface-mount devices. Ensure the 800 mA continuous output current capability meets the load requirements. Verify that the 40 V collector-emitter voltage rating provides sufficient headroom for the operating environment. Confirm that the integrated 1 kΩ bias resistors align with the drive signal specifications.
This component belongs to the Nexperia PBRN113E series, which comprises NPN BISS RETs available in multiple packages including SOT23, SOT346, and SOT54. The series is designed for digital applications requiring simplified biasing networks. The PBRN113ES specifically utilizes the SOT54 leaded package, distinguishing it from the surface-mount variants like the PBRN113ET or PBRN113EK within the same electrical family.
Direct replacements must match the NPN configuration, 800 mA current rating, 40 V voltage rating, and identical 1 kΩ/1 kΩ internal resistor values. Package compatibility requires verifying pinout alignment between SOT54 equivalents. Alternative RET families may require external resistor recalibration if internal ratios differ.