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The PBRN113ET-Q is an NPN low VCEsat Performance-Based Resistor-Equipped Transistor (RET) in a SOT23 plastic package. It features built-in bias resistors R1 and R2, both nominally 1 kΩ with a ±10% ratio tolerance. The device supports a collector-emitter voltage of 40 V and an output current capability of 600 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 400 depending on conditions, and a collector-base cut-off current maximum of 100 nA. It is qualified according to AEC-Q101 for automotive applications.
Verify the specific suffix 'QR' against the manufacturer's latest ordering information to confirm packaging details such as reel size or tape specifications. Ensure the procurement channel provides traceability documentation required for AEC-Q101 qualified components used in automotive systems. Cross-reference the marking code '%7G' with manufacturing site codes during incoming inspection.
Select this component when a compact NPN solution with integrated biasing is required for automotive digital circuits. The SOT23 package offers space efficiency compared to discrete resistor-transistor combinations. Consider the 40 V rating and 600 mA current limit to ensure adequate headroom for the intended load switching requirements.
This part belongs to Nexperia's Performance-Based (PB) Resistor-Equipped Transistor family, designed to replace multiple discrete components. The PBRN113ET-Q serves as the NPN complement to the PBRP113ET-Q. It is specifically engineered for high-density circuit designs where board space and assembly costs are critical factors in automotive and industrial electronics.
Direct functional substitutes within the same family include the PBRN113ZT, which shares similar electrical parameters but may differ in packaging or qualification status. Verify that any replacement maintains the AEC-Q101 qualification if the application mandates automotive-grade reliability.