SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PBRN113ET is an NPN low VCEsat Performance-Based Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a transistor with built-in bias resistors in a compact SOT23 surface-mounted device plastic package. The device supports a collector-emitter voltage of 40 V and provides an output current capability of 600 mA. Internal resistor values are specified as R1 = 1 kΩ and R2 = 1 kΩ, with a tolerance of ±10% for the resistor ratio. This integration reduces component count and simplifies circuit design for digital applications.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the requested part number matches the exact electrical characteristics and pin configuration required for the target application design.
Select this component when a compact solution for medium current switching is required. The integrated bias resistors eliminate external components, saving PCB area. Verify that the 40 V collector-emitter voltage rating and 600 mA current capability meet the specific load requirements of the intended circuit design.
This device belongs to the Nexperia PB RET family, designed for high-performance switching applications. It serves as the NPN complement to the PBRP113ET PNP variant. The product utilizes the standard SOT23 package, offering a space-saving alternative to discrete resistor and transistor combinations in dense circuit layouts.
The PBRP113ET is the documented PNP complement within the same series. Direct substitution requires verifying polarity compatibility and ensuring the replacement meets the specific voltage and current ratings of the original circuit design.