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The PBRN113ZS,126 is an NPN Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) manufactured by Nexperia. It operates with a collector-emitter voltage of 40 V and supports an output current of 800 mA. The device integrates bias resistors R1 (1 kΩ) and R2 (10 kΩ), yielding a ratio of 10. Packaged in the SOT54 (SC-43A/TO-92) plastic single-ended leaded format, it features a maximum total power dissipation of 700 mW at 25 °C ambient temperature. The junction temperature limit is 150 °C, with an operating range from -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packing method and manufacturing origin. The provided datasheet indicates that the '126' suffix corresponds to the SOT54 tape and reel, wide pitch configuration. Confirm compliance with RoHS directives and ensure the source document matches the current product status before procurement.
Select this component when a compact NPN transistor with integrated base biasing is required for space-constrained designs. The SOT54 package is appropriate for through-hole mounting where standard lead spacing is needed. Ensure the load current does not exceed 800 mA and verify that the thermal resistance characteristics on the printed circuit board support the expected power dissipation levels under operating conditions.
This device belongs to the PBRN113Z series of NPN BISS RETs, which also includes surface-mount variants like the PBRN113ZK (SOT346) and PBRN113ZT (SOT23). All series members share identical electrical characteristics but differ in physical packaging and pinout configurations. The PBRN113ZS variant specifically addresses requirements for robust through-hole assembly in industrial environments.
Direct functional substitutes within the same family include PBRN113ZK and PBRN113ZT, though package differences require layout adjustments. Cross-package replacements must account for pinout variations between SOT54 and other small signal packages.