PBRN113ZT-QR

PBRN113ZT-QR

$0.05
  • Description:TRANS PREBIAS NPN 40V TO236AB
  • Series:-

SKU:dfd0b12302dc Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 40V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:500 @ 600mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PBRN113ZT-QR

Overview

The PBRN113ZT-Q is an NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates bias resistors into a small SOT23 (TO-236AB) Surface-Mounted Device plastic package. The device supports a collector-emitter voltage of 40 V and an output current capability of 600 mA. Internal resistor values include R1 at 1 kΩ and R2 at 10 kΩ, with a ± 10 % tolerance on the resistor ratio. The component is qualified according to AEC-Q101 standards for automotive applications.

Feature Summary

  • Integrates built-in bias resistors to reduce component count and simplify circuit design
  • Features low collector-emitter saturation voltage and high current gain for efficient switching
  • Qualified according to AEC-Q101 standards for use in automotive environments

Applications

  • Digital applications in automotive and industrial segments
  • Switching loads
  • Medium current peripheral driver

Procurement Notes

Verify the specific ordering suffix 'QR' against official Nexperia documentation to confirm reel packaging specifications and tape-and-reel dimensions. Confirm that the AEC-Q101 qualification status remains active for this specific batch. Ensure the SOT23 footprint matches the provided soldering guidelines during procurement planning.

Selection Notes

Select this component when a compact NPN transistor solution with integrated base biasing is required. The 1 kΩ input resistor and 10 kΩ feedback resistor configuration suits standard logic interface levels. Consider the 600 mA current limit and 40 V voltage rating to ensure adequate headroom for the target load conditions.

Part Context

This part belongs to the PBRN series of NPN Resistor-Equipped Transistors from Nexperia. It serves as the complement to the PNP variant, specifically the PBRP113ZT-Q. Both devices utilize the same SOT23 package and share similar performance characteristics tailored for space-constrained digital switching applications.

Replacement Considerations

The PBRN113ET is a related variant within the same family but features different internal resistor values (R1 = 1 kΩ, R2 = 1 kΩ). Verify that the change in resistor ratio does not impact the biasing requirements of the existing circuit before substituting.

PBRN113ZT-QRPBRN113ZT-QR
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