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The PBRN113ZT-Q is an NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates bias resistors into a small SOT23 (TO-236AB) Surface-Mounted Device plastic package. The device supports a collector-emitter voltage of 40 V and an output current capability of 600 mA. Internal resistor values include R1 at 1 kΩ and R2 at 10 kΩ, with a ± 10 % tolerance on the resistor ratio. The component is qualified according to AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix 'QR' against official Nexperia documentation to confirm reel packaging specifications and tape-and-reel dimensions. Confirm that the AEC-Q101 qualification status remains active for this specific batch. Ensure the SOT23 footprint matches the provided soldering guidelines during procurement planning.
Select this component when a compact NPN transistor solution with integrated base biasing is required. The 1 kΩ input resistor and 10 kΩ feedback resistor configuration suits standard logic interface levels. Consider the 600 mA current limit and 40 V voltage rating to ensure adequate headroom for the target load conditions.
This part belongs to the PBRN series of NPN Resistor-Equipped Transistors from Nexperia. It serves as the complement to the PNP variant, specifically the PBRP113ZT-Q. Both devices utilize the same SOT23 package and share similar performance characteristics tailored for space-constrained digital switching applications.
The PBRN113ET is a related variant within the same family but features different internal resistor values (R1 = 1 kΩ, R2 = 1 kΩ). Verify that the change in resistor ratio does not impact the biasing requirements of the existing circuit before substituting.