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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 40V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic：1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PBRN113ZT,215 is an NPN low VCEsat Performance-Based Resistor-Equipped Transistor (RET) in a SOT23 (TO-236AB) package. It features built-in bias resistors R1 and R2 with nominal values of 1 kΩ and 10 kΩ respectively, providing a ratio tolerance of ±10%. The device supports a maximum collector-emitter voltage (VCEO) of 40 V and a continuous output current (IO) of 600 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 500 at 300 mA/5 V and a collector-emitter saturation voltage (VCEsat) maximum of 1.15 V at 800 mA/8 mA. Total power dissipation is rated at 250 mW.
Feature Summary
- Integrates bias resistors to simplify circuit design and reduce component count
- Optimized for low collector-emitter saturation voltage (VCEsat)
- High current gain capability for efficient switching performance
- ±10% resistor ratio tolerance ensures consistent biasing
Applications
- Digital applications in automotive and industrial segments
- Switching loads
- Medium current peripheral driver
Procurement Notes
Verify the specific ordering suffix matches the required packaging format, such as tape and reel or cut tape, as indicated by distributor part numbers like 1727-5710-2-ND. Confirm RoHS compliance status and moisture sensitivity level (MSL 1) prior to assembly planning. Ensure the procurement source provides valid Nexperia datasheets to validate the product specifications against the official PBRN113ZT documentation.
Selection Notes
Select this component when a compact NPN solution with integrated base biasing is required for medium-current switching tasks. The SOT23 package suits space-constrained designs. Verify that the 40 V breakdown voltage and 600 mA current rating align with the application's peak and steady-state requirements. Consider the thermal resistance characteristics if operating near the 250 mW power dissipation limit.
Part Context
This device belongs to Nexperia's Performance-Based Resistor-Equipped Transistor (PB RET) family. It serves as the NPN complement to the PBRP113ZT. The PBRN113ZT variant specifically denotes the SOT23 package version. It replaces older BISS technology variants within the same functional category, offering improved saturation characteristics and standardized biasing.
Replacement Considerations
The PBRP113ZT is the documented PNP complement. Direct pin-compatible replacements within the same PB RET family should be verified against the latest Nexperia selection guide to ensure matching VCEsat and hFE specifications.
