PBRN123ES,126

Overview

The PBRN123ES,126 is an NPN Resistor-Equipped Transistor (RET) from the BISS family, housed in a SOT54 (SC-43A/TO-92) plastic single-ended leaded package. It features built-in bias resistors with R1 and R2 both at 2.2 kΩ, providing a ratio tolerance of ±10%. The device supports an output current capability of 800 mA and a collector-emitter voltage of 40 V. Total power dissipation reaches 700 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 340 to 560 at 600 mA, and a low collector-emitter saturation voltage.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count.
• Offers low collector-emitter saturation voltage for efficient switching performance.
• Provides high current gain suitable for medium current peripheral driving applications.

Applications

• Digital applications in automotive and industrial segments
• Switching loads
• Medium current peripheral driver

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging details. The -126 suffix indicates tape ammopack delivery for the SOT54 variant. Confirm that the source document matches the exact part number and revision to ensure accurate pinning and electrical specifications are applied during procurement.

Selection Notes

Select this component when a through-hole NPN transistor with integrated biasing is required for high-current switching. The SOT54 package allows for standard PCB mounting. Ensure the application operates within the 40 V collector-emitter voltage limit and 800 mA continuous current rating while accounting for thermal derating above 25 °C ambient conditions.

Part Context

This component belongs to the PBRN123E series of Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors. The series includes surface-mount variants like PBRN123EK and PBRN123ET, but the ES variant specifically utilizes the SOT54 through-hole package. It serves as a discrete solution replacing multiple external components in digital logic interfaces.

Replacement Considerations

Direct replacements must match the NPN polarity, 800 mA current rating, 40 V voltage rating, and identical 2.2 kΩ / 2.2 kΩ resistor configuration. Verify that alternative RETs fit the SOT54 footprint or allow for mechanical adaptation if pinouts differ.

FAQ

What is the pin configuration for the SOT54 package?

Pin 1 is the input (base), Pin 2 is the output (collector), and Pin 3 is GND (emitter).

What is the typical DC current gain at 600 mA?

The typical hFE is 560 when IC = 600 mA and VCE = 5 V.

How does the total power dissipation change with temperature?

Power dissipation is rated at 700 mW at Tamb ≤ 25 °C and requires derating at higher ambient temperatures as shown in the thermal characteristics curves.