PBRN123ET-QR

$0.05

Description：TRANS PREBIAS NPN 40V TO236AB
Series：-

SKU:64064eb3bfe8 Category: Single, Pre-Biased Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 40V TO236AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Resistor - Base (R1)：2.2 kOhms
Resistor - Emitter Base (R2)：2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：350 @ 600mA, 5V
Vce Saturation (Max) @ Ib, Ic：1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：250 mW
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：TO-236AB

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PBRN123ET-QR

Overview

The PBRN123ET-QR is an NPN low VCEsat Performance-Based Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates bias resistors within a small SOT23 (TO-236AB) surface-mounted device plastic package. The device features a collector-emitter voltage (VCEO) of 40 V and an output current capability of 600 mA. Typical internal resistor values are R1 = 2.2 kΩ and R2 = 2.2 kΩ, with a bias resistor ratio tolerance of ±10%. It is qualified according to AEC-Q101 for automotive applications.

Feature Summary

Built-in bias resistors reduce component count and simplify circuit design
Low collector-emitter saturation voltage (VCEsat)
High current gain (hFE)
Qualified according to AEC-Q101 standard

Applications

Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver

Procurement Notes

Verify the specific suffix 'QR' against official Nexperia documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the ordering code matches the required automotive qualification status and check for any recent product change notices that may affect availability or manufacturing site codes.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. The SOT23 package suits high-density designs. Verify that the 40 V collector-emitter voltage and 600 mA continuous current ratings align with the maximum load requirements of the target application circuit.

Part Context

This part belongs to the PBRN123 series of NPN resistor-equipped transistors. The PBRP123ET-Q serves as its PNP complement. Both devices share similar electrical characteristics but differ in polarity. The series is designed to replace discrete transistor and resistor combinations in digital logic and interface circuits.

Replacement Considerations

The PBRP123ET-Q is the PNP complement within the same family. For direct NPN replacements, verify equivalent RETs from other manufacturers ensuring matching VCEO, IC, and R1/R2 values.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.