PBRN123ET,215

Overview

The PBRN123ET,215 is an NPN low VCEsat Performance-Based Resistor-Equipped Transistor (PB RET) manufactured by Nexperia. It integrates bias resistors within a small SOT23 (TO-236AB) surface-mount package. Key electrical parameters include a collector-emitter voltage of 40 V and an output current capability of 600 mA. The device features a typical base resistor (R1) of 2.2 kΩ with a tolerance range of 1.54 kΩ to 2.96 kΩ. The internal resistor ratio (R2/R1) has a typical value of 1, bounded between 0.9 and 1.1. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, rising to 370 mW with a dedicated collector pad. The junction-to-ambient thermal resistance is 500 K/W in free air.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count.
• Features low collector-emitter saturation voltage for efficient switching performance.
• Provides high current gain and 600 mA output current capability.
• Includes ±10% resistor ratio tolerance for consistent biasing characteristics.

Applications

• Digital applications in automotive and industrial segments
• Switching loads
• Medium current peripheral driver

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the marking code '%7J' with manufacturing site codes during incoming inspection to validate authenticity and traceability.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for medium-current switching tasks. Ensure the application voltage does not exceed the 40 V collector-emitter rating. Consider the thermal resistance values if operating in environments exceeding standard ambient temperatures or requiring high duty cycle operation.

Part Context

This part belongs to the Nexperia PB RET family, designed as a drop-in replacement for discrete transistor-resistor networks. It serves as the NPN complement to the PBRP123ET PNP variant. The device utilizes the standard SOT23 footprint, facilitating space-constrained PCB layouts while maintaining robust electrical performance for general-purpose digital switching.

Replacement Considerations

Direct functional substitutes within the same package and specification include the PDTA123E series for PNP applications or other Nexperia PB RETs with matching R1/R2 values. Verify pinout compatibility and thermal characteristics before substituting with generic BJT-resistor combinations.

FAQ

What are the pin assignments for the PBRN123ET?

Pin 1 is the input (base), Pin 2 is ground (emitter), and Pin 3 is the output (collector).

What is the maximum repetitive peak output current?

The maximum repetitive peak output current is 800 mA for pulse durations less than or equal to 1 ms with a duty cycle less than or equal to 0.33.

How is the bias resistor R1 defined in terms of tolerance?

The typical value for R1 is 2.2 kΩ, with a minimum of 1.54 kΩ and a maximum of 2.96 kΩ.